Title :
Low leakage current technology in P+N silicon photodiode detector
Author :
Park, Myunghwan ; Choi, Kwangsik ; Singh, Satpal ; Aslam, Shahid ; Peckerar, Martin
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
In conclusion, we have successfully fabricated 4cm2 large area silicon photodiode detectors with extremely low leakage currents (InA/cm2). The effectiveness of shallow implantation, guard-ring structures, and gettering have been investigated.
Keywords :
elemental semiconductors; leakage currents; photodetectors; photodiodes; silicon; P+N silicon photodiode detector; guard-ring structures; low leakage current technology; shallow implantation; Boron; Detectors; Doping profiles; Educational institutions; Gettering; Leak detection; Leakage current; Photodiodes; Silicon; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378119
