Title :
Thermal modeling for power MOSFETs in DC/DC applications
Author :
Bulut, Yalcin ; Pandya, Kandarp
Author_Institution :
Vishay Siliconix, Inc., Santa Clara, CA, USA
Abstract :
In DC-to-DC converters, power MOSFETs in through-hole packages have almost completely disappeared as the industry moves toward all-surface-mount implementations. This means increasing demand for power MOSFET packages with smaller footprint, lower profile, and lower thermal resistance. While MOSFETs in the D2PAK and DPAK packages could provide the appropriate level of power dissipation for DC-to-DC applications, their physical size constrained converter-packaging density. Surface-mount alternatives such as the SO-8 address size issues, but their thermal performance is limited by a need to dissipate power through the leads and onto the PCB. One of the principal concerns in DC-to-DC power supply design is controlling heat. By increasing the efficiency of the power switch (MOSFET), it is possible to reduce heat generated, reducing size requirements and need for heat sinking. Optimal power design distributes power across the DC-to-DC converter to eliminate (or at least greatly reduce) hotspots on the power board. To achieve this, it is critical early in the design phase to understand the thermal effects of critical components. The provision of a heat flow model for the MOSFET, accurately predicting temperature effects for the switching elements on the PCB, will save time in development and allow for optimal space utilization and power component distribution. Recent major developments in silicon technology have helped power MOSFET manufacturers to reduce on-resistance (rDS(on)) for a given die size to almost negligible levels. MOSFETs for switching applications are now available with silicon resistances around 1 mΩ. Having reached this plateau, attention is being turned to ways that innovative packaging can be used to improve overall device thermal performance. A basic measure of a device´s thermal performance is the junction-to-case thermal resistance, RTH,JC, which is the thermal resistance between a power MOSFET junction and a specified reference point on the device case or package. However, finding the junction temperatures of all the devices on a PCB can be quite difficult, especially for new packages. Without any statistical data or any experience to draw upon, relying only upon the thermal resistance of the device´s package from- data sheet junction-to-case (RTH,JC) specifications can produce significant errors. Thus, predicting thermal performance precisely at board level is almost impossible. Many designers are now turning to software simulation techniques to generate representations of a system´s thermal performance.
Keywords :
DC-DC power convertors; cooling; design engineering; electric resistance; electronic design automation; heat sinks; power MOSFET; semiconductor device models; semiconductor device packaging; surface mount technology; temperature distribution; thermal analysis; thermal management (packaging); thermal resistance; 1 mohm; D2PAK; DC-to-DC converters; DC/DC applications; DPAK packages; MOSFET switching; all-surface-mount implementations; constrained converter-packaging density; data sheet junction-to-case specifications; die size; heat flow model; heat sinking; junction temperatures; junction-to-case thermal resistance; on-resistance; optimal power design; package reference point; physical size; power MOSFET junction; power MOSFET packages; power board hotspots; power dissipation; power supply design; power switch efficiency; silicon resistances; silicon technology; software-simulation techniques; thermal modeling; thermal performance; thermal resistance; through-hole packages; DC-DC power converters; Heat sinks; MOSFETs; Packaging; Power dissipation; Silicon; Space heating; Space technology; Surface resistance; Thermal resistance;
Conference_Titel :
Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-8420-2
DOI :
10.1109/ESIME.2004.1304074