Title :
Resonant cavity-enhanced quantum-dot infrared photodetectors with guided-mode resonance reflector
Author :
Chi-Cheng Wang ; Sheng-Di Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 30 2013-July 4 2013
Abstract :
We propose a resonant cavity-enhanced quantum-dot infrared photodetectors with a top mirror of Ge/SiO2 sub-wavelength grating. With a total thickness of ~7.7 μm, the simulated maximum absorption is ~60-70% at 8 μm with an enhancement factor of ~6-20.
Keywords :
III-V semiconductors; elemental semiconductors; germanium; indium compounds; infrared detectors; mirrors; optical elements; photodetectors; quantum dots; silicon compounds; Ge-SiO2; InAs; enhancement factor; guided-mode resonance reflector; resonant cavity-enhanced quantum-dot infrared photodetectors; sub-wavelength grating; top mirror; wavelength 8 mum; Absorption; Cavity resonators; Electric fields; Gallium arsenide; Photodetectors; Quantum dots; Reflectivity;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600096
