Title :
Reliable resistive switching device based on bi-layers of ZrOx/HfOx films
Author :
Lee, J. ; Lee, W. ; Jo, M. ; Park, J. ; Seong, D.-J. ; Jung, S. ; Kim, S. ; Shin, J. ; Park, S. ; Hwang, H.
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
In the conclusion, we demonstrated excellent uniformity and reliability of ZrO¿/HfO¿ bi-layers device. These excellent electrical and reliability properties of ZrO¿/HfO¿ bi-layers device show promise for future high density non-volatile memory application.
Keywords :
hafnium compounds; semiconductor device reliability; semiconductor devices; switches; zirconium compounds; ZrOx-HfOx; electrical properties; films bi-layers; high density non-volatile memory; reliability properties; resistive switching device reliability; Hafnium oxide; Nonvolatile memory;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378123
