DocumentCode
3056406
Title
A high efficient, low power, and compact charge pump by vertical MOSFET´s
Author
Sakui, Koji ; Endoh, Tetsuo
Author_Institution
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
This paper is devoted to examining the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results indicate that the Charge Pump circuits composed of the Vertical MOSFETs (Vertical CP) can drastically shrink the charge pump area and lower the power consumption in comparison with the Charge Pump composed of the Planar MOSFETs (Planar CP).
Keywords
MOSFET; charge pump circuits; low-power electronics; back-bias effect; charge pump circuits; compact charge pump; power consumption; vertical MOSFET; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Coupling circuits; Energy consumption; MOSFET circuits; Semiconductor diodes; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378125
Filename
5378125
Link To Document