Title :
A high efficient, low power, and compact charge pump by vertical MOSFET´s
Author :
Sakui, Koji ; Endoh, Tetsuo
Author_Institution :
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
Abstract :
This paper is devoted to examining the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results indicate that the Charge Pump circuits composed of the Vertical MOSFETs (Vertical CP) can drastically shrink the charge pump area and lower the power consumption in comparison with the Charge Pump composed of the Planar MOSFETs (Planar CP).
Keywords :
MOSFET; charge pump circuits; low-power electronics; back-bias effect; charge pump circuits; compact charge pump; power consumption; vertical MOSFET; Capacitors; Charge pumps; Charge transfer; Circuit simulation; Clocks; Coupling circuits; Energy consumption; MOSFET circuits; Semiconductor diodes; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378125
