Title :
A V-band power amplifier with 11.6dB gain and 7.8% PAE in GaAs 0.15µm pHEMT process technology
Author :
Ming-Wei Wu ; Chien-Pai Wu ; Yen-Chung Chiang
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
In this paper, a two-stage power amplifier (PA) implemented in the GaAs 0.15μm pHEMT process technology for V-band applications is presented. The proposed PA adopts common-source topology for each stage and a parallel RC is inserted between stages for stability. This V-band PA achieves a measured small signal gain of 11.6dB and a saturated output power of 12.2dBm. The measured peak power added efficiency (PAE) is 7.8%, and its OP1dB is 12.3dBm. The power consumption of the proposed PA is 211mW from the 5V voltage supply.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; millimetre wave power amplifiers; network topology; GaAs; common-source topology; gain 11.6 dB; pHEMT process technology; parallel RC; power 211 mW; power added efficiency; size 0.15 mum; two-stage power amplifier; voltage 5 V; Gain; Gain measurement; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Wireless communication;
Conference_Titel :
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1728-4
DOI :
10.1109/APCCAS.2012.6419004
