ZnO pyroelectric thin film field-effect transistors

Author

Mourey, Devin A. ; Zhao, Dalong A. ; Jurchescu, Oana D. ; Li, Yuanyuan V. ; Fok, Raymond ; Gundlach, David J. ; Jackson, Thomas N.

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

We report using a novel weak-oxidant plasma-enhanced atomic layer deposition (PEALD) process at 200 Â°C to deposit ZnO thin films for stable, high mobility, pyroelectric thin film transistors (TFTs). Our PEALD ZnO TFTs use Al₂O₃ gate dielectric, also deposited by PEALD, and have field-effect mobility of 20-30 cm²/V-s. In these ZnO TFTs the mobility is found to be very weakly temperature activated (< 10 meV) down to 77 K, but the devices have a fast, linear, and reversible, threshold voltage shift with temperature which is believed to be related to pyroelectric charge in the ZnO layer.

Keywords

II-VI semiconductors; atomic layer deposition; elemental semiconductors; field effect transistors; plasma CVD; pyroelectric devices; sapphire; zinc compounds; Al₂O₃; PEALD process; ZnO; field-effect mobility; gate dielectric; pyroelectric charge; pyroelectric thin film field-effect transistors; temperature 200 C; threshold voltage shift; weak-oxidant plasma-enhanced atomic layer deposition; Atomic layer deposition; Dielectric thin films; FETs; Plasma stability; Plasma temperature; Pyroelectricity; Sputtering; Thin film transistors; Threshold voltage; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378129

Filename

5378129