Title :
Resistive switching mechanisms of High-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure
Author :
Das, Atanu ; Maikap, S. ; Chang, L.B.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Novel nonvolatile resistive switching memory device using Gd203 as solid electrolytes in a Cu and IrOx/Gd203/W structure have been studied for the first time. The switching mechanism with Cu as top electrode is owing to Cu filament formation and Cu filament dissolution. On the other hand the switching with IrOx as top electrode is owing to the oxygen vacancy movement and related barrier height variation.
Keywords :
memory architecture; random-access storage; switching circuits; Cu; IrOx; barrier height variation; filament formation; nonvolatile resistive switching memory device; oxygen vacancy movement; resistive switching mechanism; Chromium; Electrodes; Energy consumption; Hafnium oxide; Hysteresis; Power engineering and energy; Reliability engineering; Scalability; Solids; Threshold voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378130
