Title :
Molecular modeling studies of IC barrier concerns
Author_Institution :
Honeywell StaR Center, Honeywell Electron. Mater., Sunnyvale, CA, USA
Abstract :
An important issue for reliability deals with migration of copper in IC structures. As line dimensions shrink and as porous materials are developed as dielectric materials, the danger of failure due to copper migration increases. This study was conducted to look at various aspects of reliability that affect copper migration. Two aspects of barrier materials were studied. Due to the link to interfacial failure, aspects of metal barrier adhesion were studied to determine whether molecular models might be used to predict and guide material choices. In addition, migration tendencies through materials were modeled to determine if material schemes might inhibit migration on the dielectric side.
Keywords :
adhesion; circuit simulation; copper; dielectric thin films; diffusion barriers; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; interface structure; Cu; IC barrier; IC structures; copper migration; dielectric side migration; interfacial failure; line dimensions; metal barrier adhesion; migration failure; molecular modeling; porous dielectric materials; reliability; Adhesives; Copper alloys; Dielectric materials; Inorganic materials; Integrated circuit modeling; Materials reliability; Predictive models; Semiconductor device modeling; Stress; Testing;
Conference_Titel :
Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on
Print_ISBN :
0-7803-8420-2
DOI :
10.1109/ESIME.2004.1304093
