Molecular modeling studies of IC barrier concerns

Author

Iwamoto, N.E.

Author_Institution

Honeywell StaR Center, Honeywell Electron. Mater., Sunnyvale, CA, USA

fYear

2004

fDate

2004

Firstpage

573

Lastpage

579

Abstract

An important issue for reliability deals with migration of copper in IC structures. As line dimensions shrink and as porous materials are developed as dielectric materials, the danger of failure due to copper migration increases. This study was conducted to look at various aspects of reliability that affect copper migration. Two aspects of barrier materials were studied. Due to the link to interfacial failure, aspects of metal barrier adhesion were studied to determine whether molecular models might be used to predict and guide material choices. In addition, migration tendencies through materials were modeled to determine if material schemes might inhibit migration on the dielectric side.

Keywords

adhesion; circuit simulation; copper; dielectric thin films; diffusion barriers; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; interface structure; Cu; IC barrier; IC structures; copper migration; dielectric side migration; interfacial failure; line dimensions; metal barrier adhesion; migration failure; molecular modeling; porous dielectric materials; reliability; Adhesives; Copper alloys; Dielectric materials; Inorganic materials; Integrated circuit modeling; Materials reliability; Predictive models; Semiconductor device modeling; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, 2004. EuroSimE 2004. Proceedings of the 5th International Conference on

Print_ISBN

0-7803-8420-2

Type

conf

DOI

10.1109/ESIME.2004.1304093

Filename

1304093