Title :
Structural and spectroscopic studies of InGaN/GaN quantum structures implanted with rare earth ions
Author :
Jadwisienczak, W.M. ; Ebdah, M.A. ; Wang, J. ; Kordesch, M.E. ; Anders, A.
Author_Institution :
Sch. of EECS, Ohio Univ., Athens, OH, USA
Abstract :
In this work the luminescence of RE ions implanted into InGaN/GaN multi-quantum wells (MQWs) and supperlattice (SL) structures was investigated. The interface quality between the QW and SL layers before and after implantation as well as after thermal annealing treatment has been studied. The corresponding luminescence from RE-doped InGaN/GaN structures was investigated by means of optical spectroscopy in the spectral range from 300 nm to 1100 nm at different temperatures.
Keywords :
III-V semiconductors; annealing; gallium compounds; indium compounds; ion implantation; photoluminescence; rare earth metals; semiconductor doping; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; InGaN-GaN; interface quality; luminescence; multiquantum well structure; optical spectroscopy; quantum structures; rare earth ion implantation; supperlattice structure; thermal annealing treatment; wavelength 300 nm to 1100 nm; Annealing; Gallium nitride; Luminescence; Optical buffering; Particle beam optics; Quantum dots; Quantum well devices; Semiconductor materials; Spectroscopy; Temperature distribution;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378137
