Structural and spectroscopic studies of InGaN/GaN quantum structures implanted with rare earth ions

Author

Jadwisienczak, W.M. ; Ebdah, M.A. ; Wang, J. ; Kordesch, M.E. ; Anders, A.

Author_Institution

Sch. of EECS, Ohio Univ., Athens, OH, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this work the luminescence of RE ions implanted into InGaN/GaN multi-quantum wells (MQWs) and supperlattice (SL) structures was investigated. The interface quality between the QW and SL layers before and after implantation as well as after thermal annealing treatment has been studied. The corresponding luminescence from RE-doped InGaN/GaN structures was investigated by means of optical spectroscopy in the spectral range from 300 nm to 1100 nm at different temperatures.

Keywords

III-V semiconductors; annealing; gallium compounds; indium compounds; ion implantation; photoluminescence; rare earth metals; semiconductor doping; semiconductor quantum wells; semiconductor superlattices; wide band gap semiconductors; InGaN-GaN; interface quality; luminescence; multiquantum well structure; optical spectroscopy; quantum structures; rare earth ion implantation; supperlattice structure; thermal annealing treatment; wavelength 300 nm to 1100 nm; Annealing; Gallium nitride; Luminescence; Optical buffering; Particle beam optics; Quantum dots; Quantum well devices; Semiconductor materials; Spectroscopy; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378137

Filename

5378137