DocumentCode :
3056787
Title :
A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
Author :
Qiong Zou ; Kaixue Ma ; Wanxin Ye ; Kiat Seng Yeo
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2012
fDate :
2-5 Dec. 2012
Firstpage :
244
Lastpage :
247
Abstract :
A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip.
Keywords :
BiCMOS integrated circuits; bipolar transistor circuits; buffer circuits; low-power electronics; voltage-controlled oscillators; SiGe BiCMOS technology; bipolar transistors; feedbacks; frequency 36 GHz; low power millimetre-wave VCO; low power voltage controlled oscillator; size 0.18 mum; transformer-based buffer; CMOS integrated circuits; Circuit faults; Phase noise; Power demand; Q factor; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1728-4
Type :
conf
DOI :
10.1109/APCCAS.2012.6419017
Filename :
6419017
Link To Document :
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