• DocumentCode
    3056787
  • Title

    A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology

  • Author

    Qiong Zou ; Kaixue Ma ; Wanxin Ye ; Kiat Seng Yeo

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2012
  • fDate
    2-5 Dec. 2012
  • Firstpage
    244
  • Lastpage
    247
  • Abstract
    A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip.
  • Keywords
    BiCMOS integrated circuits; bipolar transistor circuits; buffer circuits; low-power electronics; voltage-controlled oscillators; SiGe BiCMOS technology; bipolar transistors; feedbacks; frequency 36 GHz; low power millimetre-wave VCO; low power voltage controlled oscillator; size 0.18 mum; transformer-based buffer; CMOS integrated circuits; Circuit faults; Phase noise; Power demand; Q factor; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4577-1728-4
  • Type

    conf

  • DOI
    10.1109/APCCAS.2012.6419017
  • Filename
    6419017