DocumentCode
3056787
Title
A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
Author
Qiong Zou ; Kaixue Ma ; Wanxin Ye ; Kiat Seng Yeo
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2012
fDate
2-5 Dec. 2012
Firstpage
244
Lastpage
247
Abstract
A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip.
Keywords
BiCMOS integrated circuits; bipolar transistor circuits; buffer circuits; low-power electronics; voltage-controlled oscillators; SiGe BiCMOS technology; bipolar transistors; feedbacks; frequency 36 GHz; low power millimetre-wave VCO; low power voltage controlled oscillator; size 0.18 mum; transformer-based buffer; CMOS integrated circuits; Circuit faults; Phase noise; Power demand; Q factor; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4577-1728-4
Type
conf
DOI
10.1109/APCCAS.2012.6419017
Filename
6419017
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