DocumentCode :
3056824
Title :
Anomalous back-bias dependence of threshold voltage variability in NMOSFETs due to high concentration regions near source and drain
Author :
Yamato, Ichiro ; Mama, Tatsuya ; Tsunomura, Takaaki ; Nishida, Akio ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
2
Abstract :
An anomalous back-bias dependence of Vth variability has been experimentally observed in nMOSFET: Vth variability decreases as back-bias voltage increases. It is indicated by 3D device simulation that this phenomenon is caused by very high concentration region near source and drain, which may result in extra Vth variability in nFETs.
Keywords :
MOSFET; semiconductor device models; 3D device simulation; NMOSFET; anomalous back-bias dependence; back-bias voltage; concentration regions; threshold voltage variability; Boron; Educational institutions; MOSFETs; Monte Carlo methods; Resource description framework; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378141
Filename :
5378141
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3056824
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