• DocumentCode
    3056824
  • Title

    Anomalous back-bias dependence of threshold voltage variability in NMOSFETs due to high concentration regions near source and drain

  • Author

    Yamato, Ichiro ; Mama, Tatsuya ; Tsunomura, Takaaki ; Nishida, Akio ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An anomalous back-bias dependence of Vth variability has been experimentally observed in nMOSFET: Vth variability decreases as back-bias voltage increases. It is indicated by 3D device simulation that this phenomenon is caused by very high concentration region near source and drain, which may result in extra Vth variability in nFETs.
  • Keywords
    MOSFET; semiconductor device models; 3D device simulation; NMOSFET; anomalous back-bias dependence; back-bias voltage; concentration regions; threshold voltage variability; Boron; Educational institutions; MOSFETs; Monte Carlo methods; Resource description framework; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378141
  • Filename
    5378141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3056824