Title :
High-temperature characterization of 1200 V SiC DMOSFETs
Author :
Green, Ronald ; Everhart, Lauren ; Lelis, Avars
Author_Institution :
Power Components Branch, Army Res. Lab., MD, USA
Abstract :
In this paper, experimental SiC MOSFET devices have demonstrated high-temperature static operation with low on-state conduction loss and off-state drain leakage current. Double-pulse clamped inductive load tests are used to characterize the switching performance of SiC MOSFET devices.
Keywords :
leakage currents; power MOSFET; silicon compounds; wide band gap semiconductors; DMOSFET; MOSFET devices; SiC; double-pulse clamped inductive load tests; high-temperature characterization; high-temperature static operation; low on-state conduction loss; off-state drain leakage current; switching performance; voltage 1200 V; Educational institutions; Insulated gate bipolar transistors; Laboratories; Leakage current; MOSFETs; Power electronics; Silicon carbide; Switching loss; Temperature; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378144
