Title :
High-k Yb2O3 thin films as a sensing membrane for pH-ISFET application
Author :
Pan, Tung-Ming ; Chen, Fa-Hsyang ; Lee, Cheng-Da ; Chien, Yu-Kai ; Ko, Ho-Ming
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
This work investigates the physical and sensing properties of high-k Yb2O3 sensing thin films deposited on Si substrate by means of reactive sputtering. The Yb2O3 EIS device annealed at 800°C exhibited a high sensitivity of 55.5 mV/pH, a small hysteresis voltage of 3.76 mV, and a low drift rate. This can be explained by the well-crystallized Yb2O3 structure, a thinner silica layer, and a larger surface roughness. High-k Yb2O3 EIS devices show promise for use as sensing membrane in pH-ISFET application.
Keywords :
annealing; chemical sensors; crystal structure; dielectric materials; electrolytes; high-k dielectric thin films; hysteresis; ion sensitive field effect transistors; pH measurement; semiconductor-insulator boundaries; surface roughness; ytterbium compounds; EIS device; Si; Yb2O3; annealing; crystal structure; drift rate; electrolyte-insulator-semiconductor device; high-k thin films; hysteresis voltage; ion sensitive field effect transistor; pH sensor; pH-ISFET; physical property; reactive sputtering; sensing membrane; sensing property; surface roughness; temperature 800 degC; thin silica layer; Annealing; High K dielectric materials; High-K gate dielectrics; Hysteresis; Rough surfaces; Semiconductor thin films; Silicon compounds; Sputtering; Surface roughness; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378146
