• DocumentCode
    3057035
  • Title

    Atomic layer deposited Al2O3/Ta2O5 nanolaminate capacitors

  • Author

    Smith, S.W. ; McAuliffe, K.G. ; Conley, J.F., Jr.

  • Author_Institution
    Dept. of Mater. Sci., Oregon State Univ., Corvallis, OR, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanolaminate dielectric films offer the possibility of tailoring the electrical properties of dielectric stacks for specific applications such as the tunnel dielectric for MIM diodes, storage capacitors, non-volatile memories, and TTFTs. Nanolaminates deposited via ALD have been reported to display properties that are not just a weighted average of the component materials but depend upon the laminate structure as well.
  • Keywords
    aluminium compounds; atomic layer deposition; capacitors; dielectric materials; nanotechnology; Al2O3-Ta2O5; atomic layer deposition; electrical properties; nanolaminate capacitors; nanolaminate dielectric films; Aluminum oxide; Amorphous materials; Atomic layer deposition; Conductive films; Dielectric constant; Dielectric thin films; Electrons; Laminates; MIM capacitors; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378151
  • Filename
    5378151
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3057035