Title :
Atomic layer deposited Al2O3/Ta2O5 nanolaminate capacitors
Author :
Smith, S.W. ; McAuliffe, K.G. ; Conley, J.F., Jr.
Author_Institution :
Dept. of Mater. Sci., Oregon State Univ., Corvallis, OR, USA
Abstract :
Nanolaminate dielectric films offer the possibility of tailoring the electrical properties of dielectric stacks for specific applications such as the tunnel dielectric for MIM diodes, storage capacitors, non-volatile memories, and TTFTs. Nanolaminates deposited via ALD have been reported to display properties that are not just a weighted average of the component materials but depend upon the laminate structure as well.
Keywords :
aluminium compounds; atomic layer deposition; capacitors; dielectric materials; nanotechnology; Al2O3-Ta2O5; atomic layer deposition; electrical properties; nanolaminate capacitors; nanolaminate dielectric films; Aluminum oxide; Amorphous materials; Atomic layer deposition; Conductive films; Dielectric constant; Dielectric thin films; Electrons; Laminates; MIM capacitors; Water;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378151
