Title :
Formation of Ruthenium nanocrystals buried in HfO2 matrix for nonvolatile memory applications
Author :
Liu, Hai ; Ferrer, Domingo ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Nanocrystal floating gate memory with ruthenium nanocrystal as charge storage nodes were fabricated and characterized. With the advantages of the ruthenium, promising memory performances were achieved.
Keywords :
hafnium compounds; nanostructured materials; random-access storage; ruthenium; HfO2; Ru; charge storage nodes; nanocrystal floating gate memory; nonvolatile memory; ruthenium nanocrystals; Degradation; Dielectrics; Educational institutions; Flash memory; Hafnium oxide; Nanocrystals; Nonvolatile memory; Potential well; Robustness; Temperature;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378153
