• DocumentCode
    3057055
  • Title

    Formation of Ruthenium nanocrystals buried in HfO2 matrix for nonvolatile memory applications

  • Author

    Liu, Hai ; Ferrer, Domingo ; Banerjee, Sanjay K.

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanocrystal floating gate memory with ruthenium nanocrystal as charge storage nodes were fabricated and characterized. With the advantages of the ruthenium, promising memory performances were achieved.
  • Keywords
    hafnium compounds; nanostructured materials; random-access storage; ruthenium; HfO2; Ru; charge storage nodes; nanocrystal floating gate memory; nonvolatile memory; ruthenium nanocrystals; Degradation; Dielectrics; Educational institutions; Flash memory; Hafnium oxide; Nanocrystals; Nonvolatile memory; Potential well; Robustness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378153
  • Filename
    5378153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3057055