DocumentCode
3057091
Title
Tunable Micromirror Switches Using (110) Silicon Wafer
Author
Seo, Kyoung-Sun ; Cho, Young-Ho ; Youn, Sung-Kie
Author_Institution
Dept. of Mech. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fYear
1996
fDate
2-4 Oct. 1996
Firstpage
73
Lastpage
77
Abstract
A frequency-tunable silicon micromirror has been fabricated and tested for applications to optomechanical switching devices. A high-aspect-ratio single crystal silicon micromirror has been fabricated by an anisotropic etching of (110) silicon wafers. The micromirror, vertical to the substrates, is suspended by two pairs of boron-diffused microflexures. Static and dynamic optical switching functions have been obtained by an electrostatic drive of the micromirror in the direction parallel to the substrate. In the static mirror operation, a threshold deflection of 26.5 μm has been obtained at the DC drive voltage of 330 V. In the dynamic test, the resonant frequency of the suspended micromirror has been measured as 590 Hz. The resonant switching frequency of the micromirror has been tuned in the range of 585-450 Hz by varying the DC bias voltage in the range of 50-300 V
Keywords
electrostatic devices; elemental semiconductors; etching; micromachining; micromechanical devices; mirrors; optical fabrication; optical modulation; optical switches; silicon; tuning; 26.5 micron; 330 V; 450 to 585 Hz; 50 to 300 V; 590 Hz; B-diffused microflexures; DC bias voltage; Si; Si:B; anisotropic etching; dynamic optical switching functions; electrostatic drive; frequency-tunable Si micromirror; high-aspect-ratio; optomechanical switching devices; resonant switching frequency; static optical switching functions; tunable micromirror switches; Anisotropic magnetoresistance; Electrostatics; Etching; Frequency; Geometrical optics; Micromirrors; Silicon; Switches; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Machine and Human Science, 1996., Proceedings of the Seventh International Symposium
Conference_Location
Nagoya, Japan
Print_ISBN
0-7803-3596-1
Type
conf
DOI
10.1109/MHS.1996.563404
Filename
563404
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