Title :
FeRAM circuit technology for system on a chip
Author :
Asari, K. ; Mitsuyama, Y. ; Onoye, T. ; Shirakawa, I. ; Hirano, H. ; Honda, T. ; Otsuki, T. ; Baba, T. ; Meng, T.
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
Abstract :
The ferroelectric memory (FeRAM) has a great advantage for system on a chip, since FeRAM not only supports non-volatility but also delivers a fast memory access similar to that of DRAM. To enhance the applicability of FeRAM for embedded reconfigurable hardware, three circuit technologies are discussed in this paper. Simulation and measurement data confirmed that both power consumption and memory area can be substantially reduced, making FeRAM the most promising new technology for implementing high-performance, low-power reconfigurable hardware
Keywords :
digital simulation; ferroelectric storage; power consumption; real-time systems; reconfigurable architectures; FeRAM circuit technology; circuit technologies; embedded reconfigurable hardware; fast memory access; ferroelectric memory; low-power reconfigurable hardware; measurement data; memory area; power consumption; system on chip; Area measurement; Circuit simulation; Energy consumption; Ferroelectric films; Ferroelectric materials; Hardware; Nonvolatile memory; Power measurement; Random access memory; Semiconductor device measurement;
Conference_Titel :
Evolvable Hardware, 1999. Proceedings of the First NASA/DoD Workshop on
Conference_Location :
Pasadena, CA
Print_ISBN :
0-7695-0256-3
DOI :
10.1109/EH.1999.785453
