All-color plasmonic nanolasers with ultralow thresholds

Author

Yu-Jung Lu ; Jisun Kim ; Hung-Ying Chen ; Wen-Hao Chang ; Chih-Kang Shih ; Shangjr Gwo

Author_Institution

Dept. of Phys., Nat. Tsing-Hua Univ., Hsinchu, Taiwan

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

1

Abstract

Diffraction-unlimited semiconductor nanolasers are demonstrated by using single shape-controlled InGaN/GaN core-shell nanorods as laser gain media on Ag films epitaxially grown on Si substrates. The use of atomically smooth Ag films allows us to fabricate low-loss plasmonic cavities for ultralow-threshold, continuous-wave (CW) nanolaser operation above liquid nitrogen temperature. Furthermore, the tunable band-gap energy of the In_xGa_1-xN alloy makes it possible to realize laser emission in the full visible spectrum.

Keywords

III-V semiconductors; energy gap; epitaxial growth; gallium compounds; indium compounds; laser cavity resonators; laser tuning; metallic epitaxial layers; nanophotonics; nanorods; optical fabrication; plasmonics; semiconductor lasers; silver; wide band gap semiconductors; CW operation; InGaN-GaN-Ag; Si; Si substrates; all-color plasmonic nanolasers; atomically smooth Ag films; diffraction-unlimited semiconductor nanolasers; epitaxial growth; laser emission; laser gain media; liquid nitrogen temperature; low-loss plasmonic cavities; single shape-controlled core-shell nanorods; tunable band-gap energy; ultralow-threshold continuous-wave nanolaser operation; visible spectrum; Educational institutions; Epitaxial growth; Laser cavity resonators; Plasmons; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/CLEOPR.2013.6600140

Filename

6600140