Title :
Backscattering coefficient in MOSFETs from an extended one-flux theory
Author :
Tang, Ting-wei ; Fischetti, Massimo V. ; Jin, Seonghoon
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
Abstract :
In this paper, we derive the expression of r along the line of the one-flux theory of McKelvey et al., Shockley, and Gildenblat with some improvements.
Keywords :
MOSFET; semiconductor device models; MOSFET; backscattering coefficient; extended one-flux theory; Backscatter; Boltzmann equation; Boundary conditions; Educational institutions; MOS devices; MOSFETs; Nanoscale devices; Scattering; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378164
