A reforming technique with ion implantation for polysilicon microstructures

Author

Takeuchi, Yukihiro ; Fujita, Makiko ; Kano, Kazuhiko ; Ohtsuka, Yoshinori ; Akita, Shigeyuki ; Hattori, Tadashi

Author_Institution

Res. Labs., Nippondenso Co. Ltd., Aichi, Japan

fYear

1996

fDate

2-4 Oct 1996

Firstpage

119

Lastpage

124

Abstract

We have found that deflected polysilicon beams can be reformed by ion implantation. Under ordinary ion implantation conditions at the IC process the deflection of 1.88 μm at the tip of a polysilicon cantilever beam with a thickness of 2.1 μm and length of 200 μm was reduced to almost 0. The reforming amount can be controlled by dose, acceleration voltage and mass of the implanted ions. The cause of reforming the deflection is the compressive stress in the polysilicon beam, generated by ion implantation, and this stress makes the beam warp in an opposite direction for the deflection. It should be assumed that the amorphous state formed by ion implantation is related to the generation of compressive stress

Keywords

amorphous semiconductors; compressive strength; elemental semiconductors; ion implantation; micromachining; silicon; 1.88 mum; 2.1 mum; 200 mum; IC process; Si; acceleration voltage; amorphous state; compressive stress; deflected polysilicon beams; dose; ion implantation; mass; polysilicon beam; polysilicon cantilever beam; polysilicon microstructures; reforming technique; warp; Acceleration; Amorphous materials; Annealing; Compressive stress; Etching; Ion implantation; Laser beams; Microstructure; Structural beams; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Machine and Human Science, 1996., Proceedings of the Seventh International Symposium

Conference_Location

Nagoya

Print_ISBN

0-7803-3596-1

Type

conf

DOI

10.1109/MHS.1996.563411

Filename

563411