Title :
GHz devices from epitaxial graphene on SiC
Author :
Gaskill, D.K. ; Moon, J. ; Tedesco, J.L. ; Robinson, J.A. ; Friedman, A.L. ; Campbell, P.M. ; Jernigan, G.G. ; Hite, J. ; Myers-Ward, R.L. ; Eddy, C.R., Jr. ; Fanton, M.A.
Author_Institution :
Adv. SiC Epitaxial Res. Lab., U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
In this presentation, we provide details on our approach using Si sublimation from SiC substrates for growing EG on 50.8 mm diameter SiC wafers and discuss the impact of key material issues on RF device performance.
Keywords :
microwave devices; GHz devices; RF device performance; SiC substrates; epitaxial graphene; Conductivity; Educational institutions; FETs; Laboratories; Radio frequency; Raman scattering; Sheet materials; Silicon carbide; Spectroscopy; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378169
