DocumentCode
3057490
Title
GHz devices from epitaxial graphene on SiC
Author
Gaskill, D.K. ; Moon, J. ; Tedesco, J.L. ; Robinson, J.A. ; Friedman, A.L. ; Campbell, P.M. ; Jernigan, G.G. ; Hite, J. ; Myers-Ward, R.L. ; Eddy, C.R., Jr. ; Fanton, M.A.
Author_Institution
Adv. SiC Epitaxial Res. Lab., U.S. Naval Res. Lab., Washington, DC, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this presentation, we provide details on our approach using Si sublimation from SiC substrates for growing EG on 50.8 mm diameter SiC wafers and discuss the impact of key material issues on RF device performance.
Keywords
microwave devices; GHz devices; RF device performance; SiC substrates; epitaxial graphene; Conductivity; Educational institutions; FETs; Laboratories; Radio frequency; Raman scattering; Sheet materials; Silicon carbide; Spectroscopy; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378169
Filename
5378169
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