Bias temperature instability in silicon carbide

Low mobility and oxide instability have hindered SiC MOSFETs from commercial introduction. A potential reliability problem for such MOS devices is bias-temperature instability (BTI). MOSFET mobility, already low in SiC devices, is further degraded by increased interface trap density. With continued SiC technology development, it is only a question of time until BTI reliability concerns arise. BTI in SiC is especially important as one application is at high temperatures where this effect occurs. Our initial data indicate that BTI is a problem in SiC MOS devices.