Title :
Depth-resolved cathodoluminescence spectroscopy as a probe of defect structure in oxides
Author :
Brillson, L.J. ; Dong, Y. ; Zhang, J. ; Walsh, S. ; Mosbacker, H.L. ; Doutt, D. ; Hetzer, M.
Author_Institution :
205 Dreese Lab., Ohio State Univ., Columbus, OH, USA
Abstract :
Depth-resolved cathodoluminescence spectroscopy (DRCLS) is a powerful technique for probing the nature of defects in oxides, both electronically and spatially on a nanometer scales. The information derived from this technique provides a tool to guide the growth and processing of state-of-the-art semiconductors and dielectrics for micro and opto-electronics. DRCLS is particularly effective in probing electronic and chemical structure within ultrathin films, beyond the capabilities of conventional techniques. This talk highlights the capabilities of DRCLS with recent results from conventional oxides such as ZnO, to complex oxides such as the perovskite titanates, and the high-K dielectric HfO2. These studies establish the physical nature of native point defects in these materials as well as their spatial distribution on a nanometer scale.
Keywords :
cathodoluminescence; point defects; depth-resolved cathodoluminescence spectroscopy; oxides; point defects; ultrathin film; Chemicals; Dielectric materials; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Probes; Semiconductor films; Spectroscopy; Titanium compounds; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378171