Electronics for the post-silicon CMOS era…challenges and opportunities

Summary form only given: As we try to extend silicon-based CMOS devices towards end of the ITRS roadmap and beyond, we are confronted with several challenges that need to be mitigated with clever design, modeling and experimentation - challenges arising from electrostatic effects such as diminishing gate control, quantum effects such as tunneling and interfering waves, atomistic effects such as dopant fluctuations, many-body effects such as strong Coulomb blockade and temporal effects such as low frequency noise from traps and defects. I will discuss some routes towards a postCMOS switch the device and circuit-level possibilities arising from new materials such as organic molecules and graphene nanoribbons, as well as novel principles such as mechanical switching, non-equilibrium switching and spintronic switching.