Title :
Mapping the thickness of conducting layers by a mm-wave near-field microscope
Author :
Lann, A.F. ; Golosovsky, M. ; Davidov, D. ; Frenkel, A.
Author_Institution :
Racah Inst. of Phys., Hebrew Univ., Jerusalem, Israel
Abstract :
We describe a quantitative contactless technique of mapping resistivity of conducting films using a 80 GHz near-field scanning probe. We report (i) a capacitive method of maintaining constant probe-sample separation; (ii) a quantitative measurements of near-field mm-wave reflectivity of conducting films.
Keywords :
electric resistance measurement; metallic thin films; millimetre wave imaging; millimetre wave measurement; scanning probe microscopy; thickness measurement; 0.2 to 10 ohm; 80 GHz; Ag; Al; Au; MM-wave near-field scanning probe microscopy; Ti; capacitive method; conducting film; quantitative contactless technique; reflectivity; resistivity measurement; thickness mapping; Capacitance; Conductivity; Electrical resistance measurement; Microscopy; Optical films; Probes; Reflectivity; Semiconductivity; Substrates; Thickness measurement;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700621
