Research activities in MBE HgCdTe at SITP

Author

He, L. ; Chen, L. ; Wu, J. ; Wu, Y. ; Wang, Y.Z. ; Xu, F.F. ; Yu, M.F. ; Qiao, Y.M. ; Yang, J.R. ; Li, Y.J. ; Ding, R.J. ; Zhang, Q.Y. ; Shen, S.C.

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

453

Lastpage

454

Abstract

Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As₄ was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.

Keywords

II-VI semiconductors; X-ray diffraction; arsenic; cadmium compounds; diffusion; elemental semiconductors; focal planes; mercury compounds; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; vacancies (crystal); voids (solid); As diffusion; CdTe; HgCdTe compounds; HgCdTe:As; IRFPA; MBE; SITP; Si; diffusion; p-type doing; sticking coefficient; surface defects; thermal activation; Annealing; Doping; Gallium arsenide; Helium; Mercury (metals); Physics; Surface morphology; Temperature dependence; Temperature distribution; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422159

Filename

1422159