Title :
Research activities in MBE HgCdTe at SITP
Author :
He, L. ; Chen, L. ; Wu, J. ; Wu, Y. ; Wang, Y.Z. ; Xu, F.F. ; Yu, M.F. ; Qiao, Y.M. ; Yang, J.R. ; Li, Y.J. ; Ding, R.J. ; Zhang, Q.Y. ; Shen, S.C.
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Some results on MBE HgCdTe for the applications of IRFPAs are described. The p-type doing with As4 was studied in terms of sticking coefficient, thermal activation as well as As diffusion. Various kinds of surface defects and their relations to growth condition were classified. Results on twin-free CdTe (211) composite substrates on Si and FPA applications are presented.
Keywords :
II-VI semiconductors; X-ray diffraction; arsenic; cadmium compounds; diffusion; elemental semiconductors; focal planes; mercury compounds; molecular beam epitaxial growth; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; vacancies (crystal); voids (solid); As diffusion; CdTe; HgCdTe compounds; HgCdTe:As; IRFPA; MBE; SITP; Si; diffusion; p-type doing; sticking coefficient; surface defects; thermal activation; Annealing; Doping; Gallium arsenide; Helium; Mercury (metals); Physics; Surface morphology; Temperature dependence; Temperature distribution; Temperature sensors;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422159
