A highly integrated high-voltage bi-directional switch

In this paper, an approach is presented which advances the previous work by implementing a front-to-front device stacking concept, thus resulting in an improved utilization of space, optimized device performance and a more simplified assembly process. An innovative vertical integration scheme for power semiconductor devices has been presented, and a first prototypal assembly has demonstrated the correct electrical functionality. Although not yet optimized, the proposed approach greatly enhances power density and reduces stray inductance, while allowing the underside of both devices to be cooled. As a case study, the design and implementation of a high-voltage bi-directional switch is considered, and upon which preliminary functional tests are carried out.