Title :
Structures and opto-electrical characteristics of ZITO thin films
Author :
Hung, F.Y. ; Chen, K.J. ; Chang, S.J. ; Young, S.J. ; Hu, Z.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this work, ZnO-SnO2-In2O3 (ZITO) films were synthesized using sol-gel method to investigate the effects of ITO contents and the effect of temperature on structural characteristics, the optical transmittance and electrical properties. The crystalline quality and the optical transmittance of ZITO films were improved with decreasing ITO content. The higher crystallized temperature not only improved the ZITO film quality, but also enhanced the optical transmittance in the visible region. In addition, the crystalline quality, the optical transmittance and electrical properties of ZITO film were dominated by indium dopants content. Also, micro-tin doping was essential to promote the improvement of crystalline characteristics, optical transmittance and the surface roughness of Z9ITO film.
Keywords :
II-VI semiconductors; crystal structure; crystallisation; indium compounds; liquid phase deposited coatings; optical films; semiconductor doping; semiconductor thin films; surface roughness; transparency; wide band gap semiconductors; zinc compounds; Z9ITO film; ZITO thin film structure; ZnO-ITO; ZnO-SnO2-In2O3 thin films; crystalline quality; crystallization temperature; electrical property; indium dopants; microtin doping; optical transmittance; optoelectrical properties; sol-gel method; surface roughness; transparent conductive oxide; Conductive films; Conductivity; Crystallization; Indium tin oxide; Optical diffraction; Optical films; Optical scattering; Temperature; Transistors; Zinc oxide;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378181
