Charge transport in InN nanowires investigated by scanning probe microscopy

Author

Liu, Jie ; Cai, Zhihua ; Quddus, Ehtesham ; Koley, Goutam

Author_Institution

Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, utilized scanning current voltage microscopy (SVIM) techniques was used to investigate charge transport and trapping in the individual nanowires InN (NWs) and nanonetworks. SVIM images indicate non-uniform surface barrier height on NWs, strongly affected by surface deformations.The I_p-V_p measurements indicate type-II heterostructure band alignment causing unusually large probe current under negative bias. The conductivity of the NW_s was found to be very strongly dependent on the surface band bending, which can be explained by considering large electron accumulation at the surface.

Keywords

III-V semiconductors; deformation; electron mobility; indium compounds; nanowires; scanning probe microscopy; semiconductor quantum wires; wide band gap semiconductors; InN; charge transport; charge trapping; electron accumulation; nanonetworks; nanowires; negative bias; nonuniform surface barrier height; probe current; scanning current voltage microscopy; scanning probe microscopy; surface band bending; surface deformations; type-II heterostructure band alignment; Conductivity measurement; Crystalline materials; Current measurement; Educational institutions; Electrons; Gold; Nanowires; Scanning probe microscopy; Spatial resolution; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378182

Filename

5378182