Title :
Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection
Author :
Zhu, Xingguang ; Lee, Hang Dong ; Feng, Tian ; Rozen, John ; Ahyi, Ayayi C. ; Chen, Zengjun ; Li, Minyu ; Issac-Smith, Tamara ; Williams, John R. ; Gustafsson, Torgny ; Feldman, L.C.
Author_Institution :
Dept. of Phys. & Astron., Rutgers Univ., Piscataway, NJ, USA
Abstract :
In this paper, nitridation of thermally oxidized (0001) 4H-SiC will be discussed using nitrogen oxide and nitrogen plasma annealing. The interface trap density and channel mobility was reported as a function of interfacial nitrogen content by varying NO annealing time. Accurate elemental concentration was calculated using medium energy ion scattering spectroscopy and nitrogen incorporation in SiO2-SiC interface was presented and results were compared using other techniques such as SIMS.
Keywords :
annealing; electrical conductivity; interface states; ion-surface impact; nitridation; nitrogen compounds; plasma materials processing; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; N2; NO; SIMS; SiO2-SiC; channel mobility; elemental concentration; interface trap density; interfacial nitrogen content; medium energy ion scattering spectroscopy; nitridation; nitrogen incorporation; nitrogen oxide annealing; nitrogen plasma annealing; thermally oxidized (0001) surface; Annealing; Astronomy; Educational institutions; Nitrogen; Passivation; Physics; Plasma applications; Plasma density; Plasma devices; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378186
