Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection

Author

Zhu, Xingguang ; Lee, Hang Dong ; Feng, Tian ; Rozen, John ; Ahyi, Ayayi C. ; Chen, Zengjun ; Li, Minyu ; Issac-Smith, Tamara ; Williams, John R. ; Gustafsson, Torgny ; Feldman, L.C.

Author_Institution

Dept. of Phys. & Astron., Rutgers Univ., Piscataway, NJ, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In this paper, nitridation of thermally oxidized (0001) 4H-SiC will be discussed using nitrogen oxide and nitrogen plasma annealing. The interface trap density and channel mobility was reported as a function of interfacial nitrogen content by varying NO annealing time. Accurate elemental concentration was calculated using medium energy ion scattering spectroscopy and nitrogen incorporation in SiO₂-SiC interface was presented and results were compared using other techniques such as SIMS.

Keywords

annealing; electrical conductivity; interface states; ion-surface impact; nitridation; nitrogen compounds; plasma materials processing; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; N₂; NO; SIMS; SiO₂-SiC; channel mobility; elemental concentration; interface trap density; interfacial nitrogen content; medium energy ion scattering spectroscopy; nitridation; nitrogen incorporation; nitrogen oxide annealing; nitrogen plasma annealing; thermally oxidized (0001) surface; Annealing; Astronomy; Educational institutions; Nitrogen; Passivation; Physics; Plasma applications; Plasma density; Plasma devices; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378186

Filename

5378186