First order, quasi-static MOSFET bulk charge model showing inconsistencies in the BSIM power dissipation model

The accurate modeling of the MOSFET channel capacitance has evolved from Meyer´s reciprocal gate capacitive models to Ward´s charge-based, channel partition models. Numerous models have also been proposed to represent trans-capacitive and charging current components. Recently, a solution to separate the transport and charging current components for SOI MOSFET´s was proposed. The model also verified that Ward´s method of channel charge partitioning worked correctly as long as the charge had a linear dependence on the channel potential. This paper uses linear approximation on the first order power model for SOI MOSFET´s to include the BULK MOS transistors. There is a need to extend this work to include channel charge with nonlinear voltage dependence that does not generate extra power dissipation in the channel which has no physical basis.