Title :
Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping
Author :
Lutsenko, E.V. ; Pavlovskii, V.N. ; Danilchyk, A.V. ; Rzheutski, M.V. ; Vainilovich, A.G. ; Zubialevich, V.Z. ; Muravitskaya, A.V. ; Yablonskii, G.P.
Author_Institution :
Stepanov Inst. of Phys., NAS of Belarus, Minsk, Belarus
Abstract :
Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; integrated optoelectronics; laser cooling; light emitting diodes; optical pumping; spectral line shift; thermal resistance; wide band gap semiconductors; Bridgelux chips; EL spectra long-wavelength shift; GaN; LED; active region overheating temperature; constant current condition; direct liquid active cooling; laser media pumping; light emitting diodes; thermal resistance; voltage reduction; Laser excitation; Pump lasers;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7043-3
DOI :
10.1109/CAOL.2010.5634204
