DocumentCode
3058318
Title
Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping
Author
Lutsenko, E.V. ; Pavlovskii, V.N. ; Danilchyk, A.V. ; Rzheutski, M.V. ; Vainilovich, A.G. ; Zubialevich, V.Z. ; Muravitskaya, A.V. ; Yablonskii, G.P.
Author_Institution
Stepanov Inst. of Phys., NAS of Belarus, Minsk, Belarus
fYear
2010
fDate
10-14 Sept. 2010
Firstpage
219
Lastpage
221
Abstract
Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.
Keywords
III-V semiconductors; electroluminescence; gallium compounds; integrated optoelectronics; laser cooling; light emitting diodes; optical pumping; spectral line shift; thermal resistance; wide band gap semiconductors; Bridgelux chips; EL spectra long-wavelength shift; GaN; LED; active region overheating temperature; constant current condition; direct liquid active cooling; laser media pumping; light emitting diodes; thermal resistance; voltage reduction; Laser excitation; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7043-3
Type
conf
DOI
10.1109/CAOL.2010.5634204
Filename
5634204
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