Absorption of terahertz radiations in two-dimensional semiconductors

Author

Cao, J.C.

Author_Institution

Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

495

Lastpage

496

Abstract

Nonlinear free-carrier absorption of terahertz radiations in semiconductor heterojunctions have theoretically been investigated by considering multiple photon process and conduction-valence interband impact ionisation (II). We have determined the field and frequency dependent absorption rate. It is found that electron-disorder scatterings are important at low to intermediate fields, and the high field absorption is dominated by II processes.

Keywords

III-V semiconductors; aluminium compounds; electron-hole recombination; electron-phonon interactions; impact ionisation; indium compounds; multiphoton processes; semiconductor heterojunctions; submillimetre waves; InAs-AlSb; conduction-valence interband impact ionisation; electron disorder scatterings; electron-phonon interactions; field dependent absorption rate; frequency dependent absorption rate; multiple photon process; nonlinear free carrier absorption; semiconductor heterojunctions; terahertz radiations; two dimensional semiconductors; Electromagnetic radiation; Electromagnetic scattering; Electromagnetic wave absorption; Electrons; Heterojunctions; Impact ionization; Ionizing radiation; Light scattering; Particle scattering; Semiconductor impurities;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422180

Filename

1422180