Title :
Optical investigation of InGaAsP/InP double heterostructure wafers
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
Complex and informative luminescent spectra have been obtained by using visible sources for excitation of InGaAsP/InP double heterostructure diode wafers. The thin contact layer transforms the high energy exciting light to lower energy photons which can excite the active layer, although the InP confining layers are not transparent for primary exciting photon.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; luminescent devices; photoexcitation; photoluminescence; semiconductor diodes; semiconductor heterojunctions; InGaAsP-InP; complex luminescent spectra; double heterostructure diode wafers; informative luminescent spectra; lower energy photons; photoexcitation; visible sources; Light emitting diodes; Optical scattering; Optical variables measurement; Stimulated emission;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7043-3
DOI :
10.1109/CAOL.2010.5634207
