THz emission from GaSb samples with modified surface stoichiometry

Author

Winnerl, S. ; Dekorsy, T. ; Sinning, S. ; Helm, M.

Author_Institution

Inst. of Ion-Beam Phys. & Mater. Res., Forschungszentrum Rossendorf, Dresden, Germany

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

499

Lastpage

500

Abstract

We report on the terahertz emission from GaSb surfaces with thermally modified surface stoichiometry. The thermal treatment increases significantly the THz emission from the GaSb samples. For optimal conditions, namely an annealing temperature of 500°C, the emission is comparable to the emission from n-doped GaAs. The THz emission is due to the acceleration of carriers in a surface field, caused by a surface decomposition. The surface decomposition was confirmed by the observation of Sb coherent phonons in pump-probe experiments.

Keywords

III-V semiconductors; dissociation; gallium compounds; optical pumping; pyrolysis; rapid thermal annealing; stoichiometry; submillimetre wave spectra; submillimetre waves; surface chemistry; surface composition; surface phonons; 500 degC; GaSb; GaSb surfaces; Sb coherent phonons; THz emission; annealing; carrier acceleration; modified surface stoichiometry; pump-probe experiments; surface decomposition; terahertz emission; thermal treatment; Annealing; Gallium arsenide; Gas lasers; Laser beams; Optical pulse generation; Optical surface waves; Surface emitting lasers; Surface treatment; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422182

Filename

1422182