Title :
Performance analysis of nonvolatile gate-all-around charge-trapping TAHOS memory cells
Author :
Gnani, E. ; Gnudi, A. ; Reggiani, S. ; Baccarani, G. ; Fu, J. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
ARCES, Univ. of Bologna, Bologna, Italy
Abstract :
In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both planar and cylindrical geometries.
Keywords :
alumina; electron traps; hafnium compounds; numerical analysis; random-access storage; silicon; silicon compounds; tantalum compounds; TAHOS nonvolatile memory cells; TaN-Al2O3-HfO2-SiO2-Si; cylindrical geometry; gate-all-around architecture; in-house developed simulation code; nonvolatile gate-all-around charge-trapping; numerical simulation; planar geometry; Charge carrier processes; Educational institutions; Electron traps; Energy states; Geometry; Hafnium oxide; Microelectronics; Nonvolatile memory; Performance analysis; Poisson equations;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378209
