• DocumentCode
    3058497
  • Title

    Analysis and modeling of the pinch-off point in a lightly doped asymmetrically biased double gate MOSFET

  • Author

    Weidemann, Michaela ; Schwarz, Mike ; Kloes, Alexander ; Iniguez, Benjamin

  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, analysis of a completely depleted double gate MOSFET device, whereby each channel is looked at individually, is presented. The pinch-off point in a lightly doped asymmetrically biased double gate MOSFET is modelled.
  • Keywords
    MOSFET; semiconductor device models; completely depleted double gate MOSFET device modeling; lightly doped asymmetrically biased double gate MOSFET; pinch-off point analysis; Automatic control; Current density; Educational institutions; Electrons; FETs; Information analysis; MOSFET circuits; Solid modeling; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378211
  • Filename
    5378211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3058497