DocumentCode :
3058544
Title :
Surface magnetoplasmon-polariton in doped GaN-GaNxAs1-x multiple quantum wells
Author :
Shayesteh, S. Farjami ; Parker, T.J.
fYear :
2004
fDate :
27 Sept.-1 Oct. 2004
Firstpage :
505
Lastpage :
506
Abstract :
In this work, the surface magnetoplasmon-polariton and surface phonon-polariton in the doped GaN-GaNxAs1-x multiple quantum wells are investigated in the presence high magnetic field parallel to the surface of layers and perpendicular to the propagation direction and employing effective medium approach.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; polaritons; semiconductor quantum wells; surface phonons; surface plasmons; wide band gap semiconductors; GaN-GaNxAs1-x; GaN-GaNxAs1-x multiple quantum wells; doping; effective medium method; magnetic field; propagation direction; surface magnetoplasmon-polariton; surface phonon-polariton; Charge carrier processes; Cyclotrons; Electron optics; Frequency dependence; Infrared spectra; Magnetic fields; Optical surface waves; Phonons; Quantum well devices; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
Type :
conf
DOI :
10.1109/ICIMW.2004.1422185
Filename :
1422185
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3058544
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