• DocumentCode
    3058544
  • Title

    Surface magnetoplasmon-polariton in doped GaN-GaNxAs1-x multiple quantum wells

  • Author

    Shayesteh, S. Farjami ; Parker, T.J.

  • fYear
    2004
  • fDate
    27 Sept.-1 Oct. 2004
  • Firstpage
    505
  • Lastpage
    506
  • Abstract
    In this work, the surface magnetoplasmon-polariton and surface phonon-polariton in the doped GaN-GaNxAs1-x multiple quantum wells are investigated in the presence high magnetic field parallel to the surface of layers and perpendicular to the propagation direction and employing effective medium approach.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; polaritons; semiconductor quantum wells; surface phonons; surface plasmons; wide band gap semiconductors; GaN-GaNxAs1-x; GaN-GaNxAs1-x multiple quantum wells; doping; effective medium method; magnetic field; propagation direction; surface magnetoplasmon-polariton; surface phonon-polariton; Charge carrier processes; Cyclotrons; Electron optics; Frequency dependence; Infrared spectra; Magnetic fields; Optical surface waves; Phonons; Quantum well devices; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
  • Print_ISBN
    0-7803-8490-3
  • Type

    conf

  • DOI
    10.1109/ICIMW.2004.1422185
  • Filename
    1422185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3058544