Title :
Excitation spectroscopy of Si:P THz laser and infrared photoconductivity in Ge:Te
Author :
Nakata, H. ; Yokoyama, A. ; Hatou, T. ; Ohyama, T. ; Tsubouchi, N. ; Pavlov, S.G. ; Heubers, H.W.
Author_Institution :
Dept. of Arts & Sci., Osaka Kyoiku Univ., Kashiwara, Japan
fDate :
27 Sept.-1 Oct. 2004
Abstract :
We observed infrared photoconductivity in Ge:Te and THz laser emission from Si:P excited by a free electron laser (FEL) or CO2 lasers. The emission intensity decreases with increasing photon energy of the FEL in the range of about 120 meV. Photoconductivity spectra of Ge:Te has LO phonon structures.
Keywords :
elemental semiconductors; free electron lasers; gas lasers; germanium; phosphorus; photoconductivity; silicon; submillimetre wave lasers; tellurium; 120 meV; CO2 lasers; FEL; LO phonon structures; Si:P THz laser; THz laser emission; emission intensity; excitation spectroscopy; free electron laser; infrared photoconductivity; photoconductivity spectra; photon energy; Electron emission; Free electron lasers; Infrared spectra; Ionization; Laser excitation; Laser transitions; Magnetic fields; Photoconductivity; Spectroscopy; Stationary state;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422186
