Title :
Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
Author :
Koh, Shao-Ming ; Sinha, Mantavya ; Tong, Yi ; Chin, Hock-Chun ; Fang, Wei-Wei ; Zhang, Xingui ; Ng, Chee-Mang ; Samudra, Ganesh ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A novel approach exploiting the concept of NiSi:C/Si:C interface dipole engineering for electron barrier height ¿B N reduction is demonstrated in strained n-FinFETs using S+ ion implant. The new approach is simple and promising for reducing contact resistance RCSD in advanced device architectures such as the FinFETs.
Keywords :
MOSFET; carbon; contact resistance; elemental semiconductors; ion implantation; nickel compounds; silicon; sulphur; NiSi:C-Si:C; electron barrier height; interface dipole engineering; ion implantation; n-FinFET; nickel silicide contact resistance; silicon-carbon source-drain; sulfur implant; Computer aided manufacturing; Computer industry; Contact resistance; Educational institutions; FinFETs; Implants; Nickel; Pulp manufacturing; Semiconductor device manufacture; Silicides;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378216
