DocumentCode
3058827
Title
Analytical expressions of transient thermal response of self-heating semiconductor devices
Author
Zhu, Y. ; Twynam, J.K. ; Yagura, M. ; Hasegawa, M. ; Eguchi, Y. ; Yamada, A. ; Suematsu, E. ; Sakuno, K. ; Sato, H. ; Hashizurne, N.
Author_Institution
Central Res. Labs., Sharp Corp., Nara, Japan
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1357
Abstract
Analytical expressions of the transient thermal response of self-heating devices have been derived based on a feedback amplifier circuit model yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The transient thermal responses of GaInP/GaAs HBT were measured and explained using the expressions derived.
Keywords
III-V semiconductors; feedback amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; transient response; GaInP-GaAs; GaInP/GaAs HBT; feedback amplifier circuit model; self-heating semiconductor device; thermal time constant; transient thermal response; Feedback amplifiers; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Negative feedback; Semiconductor devices; State feedback; Thermal conductivity; Thermal resistance; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700626
Filename
700626
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