DocumentCode
3058913
Title
Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETs
Author
Darbandy, Ghader ; Ritzenthaler, Romain ; Lime, Francois ; Garduño, S.I. ; Estrada, M. ; Cerdeira, A. ; Iñiguez, B.
Author_Institution
Dept. d´´Eng. Electron., Electr. i Autom., Univ. Rovira i Virgili, Tarragona, Spain
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this paper the gate leakage current in metal-oxide-semiconductor (MOS) is studied in order to find promising materials for the 22 nm node in double gate MOSFETs by considering simple and improved analytical models of the direct tunneling current by using proper WKB tunneling probability through gate oxide.
Keywords
MOSFET; silicon-on-insulator; double-gate SOI MOSFET; gate leakage current; gate tunneling leakage; high-K dielectrics; size 22 nm; Analytical models; Dielectric constant; Dielectric materials; Effective mass; Electrons; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378235
Filename
5378235
Link To Document