Title :
Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETs
Author :
Darbandy, Ghader ; Ritzenthaler, Romain ; Lime, Francois ; Garduño, S.I. ; Estrada, M. ; Cerdeira, A. ; Iñiguez, B.
Author_Institution :
Dept. d´´Eng. Electron., Electr. i Autom., Univ. Rovira i Virgili, Tarragona, Spain
Abstract :
In this paper the gate leakage current in metal-oxide-semiconductor (MOS) is studied in order to find promising materials for the 22 nm node in double gate MOSFETs by considering simple and improved analytical models of the direct tunneling current by using proper WKB tunneling probability through gate oxide.
Keywords :
MOSFET; silicon-on-insulator; double-gate SOI MOSFET; gate leakage current; gate tunneling leakage; high-K dielectrics; size 22 nm; Analytical models; Dielectric constant; Dielectric materials; Effective mass; Electrons; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378235
