Title :
Charge trapping and current conduction mechanisms of advanced metal-oxide-semiconductor capacitors with LaxTay dual-doped HfON dielectrics
Author :
Cheng, Chin-Lung ; Horng, Jeng-Haur ; Chang-Liao, Kuei-Shu ; Jeng, Jin-Tsong ; Tsai, Hung-Yung
Author_Institution :
Inst. of Mech. & Electro-Mech. Eng., Nat. Formosa Univ., Huwei, Taiwan
Abstract :
In summary, the improved characteristics in terms of EOT, D;t, SILC, and trap energy level are demonstrated by developing proper La¿Ta¿ doping into HfON dielectrics.
Keywords :
MOS capacitors; dielectric materials; electron traps; hafnium compounds; HfON; La??Ta?? doping; La¿Ta¿ doping; charge trapping; current conduction mechanisms; dielectrics; metal-oxide-semiconductor capacitors; trap energy level; Computer science; Dielectric devices; Educational institutions; Energy states; Hafnium; High K dielectric materials; MOS capacitors; Radio frequency; Rapid thermal annealing; Systems engineering and theory;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378236
