Title :
Droop studies for high-performance InGaN blue light-emitting diodes
Author :
Jong-In Shim ; Hyunsung Kim ; Dong-Pyo Han ; Dong-Soo Shin
Author_Institution :
Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
fDate :
June 30 2013-July 4 2013
Abstract :
An origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN; high-performance blue light-emitting diodes; quantum well; radiative-nonradiative recombination rate; Charge carrier density; Electroluminescence; Light emitting diodes; Radiative recombination; Shape;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600207
