• DocumentCode
    3059000
  • Title

    Charge trapping flash device with Si3N4/HfxAl1−xO stack charge trapping layer

  • Author

    Ye, Zong-Hao ; Chang-Liao, Kuei-Shu ; Tsai, Tzu-Ting ; Wang, Tien-Ko

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Although enhancement on electrical properties of flash devices with HfAlO charge trapping layer has been reported, there are still serious problems in retention characteristics. In this work, a charge-trapping (CT) flash device with Si3N4/HfxAl1-xO as charge trapping layer is presented. Experimental results show that the program/erase speeds of the proposed devices can be enhanced and the retention characteristic is improved as well.
  • Keywords
    NAND circuits; electron traps; flash memories; hafnium compounds; hole traps; silicon compounds; Si3N4-HfxAl1-xO; charge trapping flash device; electrical property enhancement; retention characteristics; stack charge trapping layer; Educational institutions; Electron devices; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOCVD; SONOS devices; Systems engineering and theory; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378239
  • Filename
    5378239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059000