Title :
Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes
Author :
Han-Youl Ryu ; Il-Gyun Choi ; Hyo-Sik Choi ; Jong-In Shim
Author_Institution :
Dept. Phys., Inha Univ., Incheon, South Korea
fDate :
June 30 2013-July 4 2013
Abstract :
Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <;10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths.
Keywords :
III-V semiconductors; aluminium compounds; finite difference time-domain analysis; gallium compounds; light absorption; light emitting diodes; wide band gap semiconductors; AlGaN deep ultraviolet light-emitting diodes; AlGaN-GaN; UV LED; UV light absorption; external quantum efficiency; finite-difference time-domain simulations; flip-chip LED structures; light extraction efficiency; numerical investigation; p-GaN layer; transverse-electric modes; transverse-magnetic modes; Conferences; Electrooptical waveguides; Lasers and electrooptics;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600210
