A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET

Author

Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas

Author_Institution

CNRS, France

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

This paper presents a versatile compact model dedicated to ballistic ID transistors that are fabricated in very advanced technologies, in order to predict the ultimate performances of novel nano-device-based circuits. The results presented here after are related to MOS like CNTFET and GNRFET thanks to a unified expression of the non parabolic energy dispersion relation NPEDR which enhances other tentative works limited to the parabolic case and to Boltzmann approximation. To warrant the accuracy as well as the flexibility of this compact model for ballistic ID transistor, we have developed a thermionic charge model based on NPEDR.

Keywords

field effect transistors; semiconductor device manufacture; semiconductor device models; Boltzmann approximation; CNTFET; GNRFET; MOS; NPEDR; ballistic 1D transistor; nano-device-based circuits; parabolic energy dispersion; Circuit simulation; Dispersion; Educational institutions; Effective mass; Electrons; Equations; Predictive models; Smoothing methods; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378241

Filename

5378241