Title :
1 W A1InGaN based green laser diodes
Author :
Masui, Shoichi ; Miyoshi, Takanori ; Yanamoto, Tomoya ; Nagahama, Shin-ichi
Author_Institution :
Nichia Corp., Anan, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
The AlInGaN based green laser diodes were grown on c face GaN substrates by a metal organic chemical vapor deposition method. As a result, we succeeded in demonstrating 1W 525 nm Green LDs. The optical output power, voltage and the wall-plug efficiency at the forward current of cw 1.5 A were 1.01 W, 4.76 V and 14.1% at 25°C, respectively. The lifetime was estimated to be over 15,000 h by the lifetime test which was carried out under the condition of a constant current of 1.5 A at 50°C for 1000 h.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; semiconductor lasers; wide band gap semiconductors; AlInGaN; GaN; c face GaN substrates; constant current; current 1.5 A; green laser diodes; lifetime test; metal organic chemical vapor deposition; power 1 W; power 1.01 W; temperature 25 degC; temperature 50 degC; time 1000 h; voltage 4.76 V; wavelength 525 nm; Conferences; Electrooptical waveguides; Lasers and electrooptics;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600212
