Title :
Amorphous semiconductor blocking contacts on CdZnTe gamma detectors
Author :
Conway, Adam M. ; Sturm, Benjamin W. ; Voss, Lars F. ; Beck, Patrick R. ; Graff, Robert T. ; Nikolic, Rebecca J. ; Nelson, Art J. ; Payne, Steven A.
Author_Institution :
Lawrence Livermore Nat. Lab., Livermore, CA, USA
Abstract :
In this work, the authors investigate the effect of hydrogenated amorphous Si (a-Si:H) layers on oriented CdZnTe on leakage current and the gamma detection response.
Keywords :
amorphous semiconductors; cadmium compounds; gamma-ray detection; leakage currents; silicon; CdZnTe; Si; amorphous semiconductor; blocking contacts; gamma detectors; hydrogenated amorphous silicon; leakage current; Amorphous materials; Amorphous semiconductors; Conductivity; Crystallization; Energy resolution; Gamma ray detection; Gamma ray detectors; Leakage current; Radiation detectors; Schottky barriers;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378245
